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These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc).

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Published:
12/01/2018
Number of Pages:
28
File Size:
1 file , 420 KB

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These guidelines apply to monolithic microwave GaAs integrated circuits (MMICs) and their individual component building blocks, such as GaAs field effect transistors (FETs), resistors, and capacitors. The purpose of this document is to define a standard approach for evaluating the expected live of GaAs MMICs so that results from different life tests can be compared and so that wording of this document that the MMIC contains at least one FET, but the use of this document has no such limitation.

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Published:
01/01/1993
Number of Pages:
20
File Size:
1 file , 570 KB

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