Click here to purchase
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
Product Details
- Published:
- 01/01/2003
- Number of Pages:
- 7
- File Size:
- 1 file , 89 KB
