1.1 This specification covers round drawn/extruded gold wire for internal semiconductor device electrical connections. Four classifications of wire are distinguished, (1) copper-modified wire, (2) beryllium-modified wire, ( 3) high-strength wire, and (4) special purpose wire. Note 1Trace metallic elements have a significant effect upon the mechanical properties and thermal stability of high-purity gold wire. It is customary in manufacturing to add controlled amounts of selected impurities to gold to modify or stabilize bonding wire properties or both. This practice is known variously as “modifying,” “stabilizing,” or “doping.” The first two wire classifications denoted in this specification refer to wire made with either of two particular modifiers, copper or beryllium, in general use. In the third and fourth wire classifications, “high-strength” and “special purpose” wire, the identity of modifying additives is not restricted.
1.2 The values stated in SI units shall be regarded as the standard.
1.2.1 A mixed system of metric and inch-pound units is in widespread use for specifying semiconductor lead-bonding wire. SI-equivalent values of other commonly used units are denoted by parentheses in text and tables.
Product Details
- Published:
- 01/01/2006
- Number of Pages:
- 11
- File Size:
- 1 file , 170 KB
- Redline File Size:
- 2 files , 330 KB
