This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This guide covers the formulation, selection, and use of chemical solutions developed to reveal structural defects in silicon wafers. Etching solutions identify crystal defects that adversely affect the circuit performance and yield of silicon devices. Sample preparation, temperature control, etching technique, and choice of etchant are all key factors in the successful use of an etching method. This guide provides information for several etching solutions and allows the user to select according to the need. For further information see Appendix X1 and Figs. 1-32. For a test method for counting preferentially etched or decorated surface defects in silicon wafers see Test Method F 1810.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Product Details
- Published:
- 12/10/2002
- Number of Pages:
- 9
- File Size:
- 1 file , 820 KB
