This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice covers the surface preparation of silicon samples prior to measurement of resistivity variations by the spreading resistance technique.
1.2 Separate procedures are given for preparation of large-area specimens for measurement of lateral resistivity variations and for preparation of bevel-sectioned specimens (usually small chips) for measurement of vertical variations of resistivity (depth profiling).
Note 1-Benefits derived from diamond polishing are ( ) stability and reproducibility of spreading resistance values on large area or beveled specimens, and ( ) acuity of beveled surface geometry. The benefits of stability and reproducibility are likely to apply to both conductivity types and all resistivity values; however, they have been demonstrated extensively only for (111) -type above 1 [omega][dot]cm. Enhanced bevel acuity is independent of conductivity-type or resistivity value.
1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Product Details
- Published:
- 01/01/1999
- Number of Pages:
- 4
- File Size:
- 1 file , 54 KB
